2SB1710 transistors 1/2 general purpose amplification ( ? 30v, ? 1a) 2SB1710 z application low frequency amplifier driver z features 1) a collector current is large. 2) collector saturation voltage is low. v ce (sat) ? 350mv at ic = ? 500ma / i b = ? 25ma z external dimensions (units : mm) rohm :tsmt3 (1) base (2) emitter (3) collector 1.6 2.8 0.4 0.16 0~0.1 0.3 0.6 ( 3 ) 0.85 0.7 0.95 (1) 2.9 1.9 (2) 0.95 each lead has same dimensions abbreviated symbol : ew 1.0max z absolute maximum ratings (ta=25 c) parameter symbol v cbo v ceo v ebo i c i cp p c tj tstg limits ? 30 ? 30 ? 6 ? 1 500 150 ? 55~ + 150 ? 2 ? 1 unit v v v a a mw c c ? 2 ? 1 ? 2 collector-base voltage collector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature single pulse, p w = 1ms each terminal mounted on a recommended z packaging specifications 2SB1710 tl 3000 type package code basic ordering unit (pieces) taping z electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions v cb =? 10v, i e = 0a, f = 1mhz f t ? 320 ? mhz v ce =? 2v, i e = 100ma, f = 100mhz bv cbo ? 30 ?? v i c =? 10 a bv ceo ? 30 ?? v i c =? 1ma bv ebo ? 6 ?? v i e =? 10 a i cbo ?? ? 100 na v cb =? 30v i ebo ?? ? 100 na v eb =? 6v v ce(sat) ?? 150 ? 350 mv i c =? 500ma, i b =? 25ma h fe 270 ? 680 ? v ce =? 2v, i c =? 100ma cob ? 7 ? pf ? ? collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current gain transition frequency corrector output capacitance ? pulsed
2SB1710 transistors 2/2 z electrical characteristic curves 0.001 0.01 0.1 1 10 collector current : i c (a) 10 dc current gain : h fe 1000 100 ta = 100 c ta =? 40 c ta = 25 c v ce =? 2v pulsed fig.1 dc current gain vs. collector current 0.1 0.01 10 1 0.001 0.01 0.1 1 collector current : i c (a) base saturation voltage : v be (sat) (v) collector saturation voltage : v ce (sat) (v) ta = 25 c ta = 25 c ta =? 40 c ta =? 40 c ta = 100 c ta = 100 c v be(sat) v ce(sat) i c /i b = 20/1 pulsed fig.2 collector-emitter saturation voltage base-emitter saturation voltage vs. collector current 0.001 0.01 0.1 1 collector current : i c (a) 0.001 0.01 collector saturation voltage : v ce(sat) (v) 0.1 1 10 ta = 25 c pulsed i c /i b = 10/1 i c /i b = 20/1 i c /i b = 50/1 fig.3 collector-emitter saturation voltage vs. collector current 0 0.5 1 1.5 base to emitter current : v be (v) 0.001 collector current : i c (a) 0.01 1 0.1 v ce =? 2v pulsed ta = 100 c ta = 25 c ta =? 40 c fig.4 grounded emitter propagation characteristics 0.01 0.1 1 emitter current : i e (a) 10 transition frequency : f t (mhz) 1000 100 ta = 25 c v ce =? 2v f = 100mhz fig.5 gain bandwidth product vs. emitter current 0.01 0.1 1 collector current : i c (a) 1 10 1000 100 ta = 25 c v ce =? 5v i c /i b = 20/1 tstg tdon tr tf fig.6 switching time switching time : (ns) 1 10 100 0.1 1 10 100 f = 1mhz i c = 0a ta = 25 c collector output capacitance : cob (pf) emitter input capacitance : cib (pf) cib cob fig.7 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage emitter to base voltage : v eb ( v) collector to base voltage : v cb ( v)
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